DDR 压力测试相关问题请教。

Work-Tang · 发表于 2018-3-29 19:35:32

您好，我参照SABRESDP原理图设计了一块板子【IMX6Q+DDR3（H5TQ2G63FFR-PBC）】，能运行Android系统。可是今天在做压力测试的时候，使用官方提供的MX6Q_SabreSD_DDR3_register_programming_aid_v1.5.inc脚本代码（查数据手册发现H5TQ2G63FFR-PBC与官方使用的MT41K128M16JT参数是一样的，所以直接使用了官方提供的脚本代码。），通过了校准，但在进行DDR3压力测试时出现如下错误，请问是出了什么问题呢？
============================================
      DDR Stress Test (2.6.0)
      Build: Jan 24 2018, 14:20:42
      NXP Semiconductors.
============================================
============================================
      Chip ID

CHIP ID = i.MX6 Dual/Quad (0x63)

Internal Revision = TO1.5
============================================
============================================
      Boot Configuration

SRC_SBMR1(0x020d8004) = 0x00000000

SRC_SBMR2(0x020d801c) = 0x08000001
============================================
ARM Clock set to 1GHz
============================================
      DDR configuration

BOOT_CFG3[5-4]: 0x00, Single DDR channel.

DDR type is DDR3

Data width: 64, bank num: 8

Row size: 15, col size: 10

Chip select CSD0 is used

Density per chip select: 2048MB
===========================================
DDR Stress Test Iteration 1

Current Temperature: 50
============================================
DDR Freq: 396 MHz

t0.1: data is addr test

Address of failure(step2): 0x10000000

Data was: 0x50000000

But pattern  should match address

Error: failed to run stress test!!!

求指教啊。。。

我知道答案目前已有3人回答

阅读全文